Gate-controlled Diode – a New Way for Electronic Circuits

The gate-controlled diode (or gated diode) is a semiconductor device that combines the function of a p-n junction and a MOS capacitor [1, 2]. The schematic cross-section structure is shown in figure 1. The terminals of the junction are noted A (anode) and K (cathode), while the control electrode is the gate G. The voltage across the p-n junction working in avalanche breakdown regime has the absolute value VBR. The control voltage, refereed to the anode, is VG as is known in the common-anode configuration. Taking into account the electrical isolation of the gate, the currents through anode and cathode are equal, their value being noted IR (see figure 2).